Because in my simulation, the last thing to worry about that I measured was the gate current. I saw that it was about 3.5 amps and that worried me. Still though i am only dissipating about 20 watts.
for an estimated Ciss of 2500 pF, Rg=4 ohms est. Vgs=12 to get 3.5 Apeak the dV/dt=Vgs/RgC = 12/4*2.5e-9 or 12V/10ns. Then yes it is possible or a period of 10ns.
Because in my simulation, the last thing to worry about that I measured was the gate current. I saw that it was about 3.5 amps and that worried me. Still though i am only dissipating about 20 watts.
This is an AC current, not a DC current. The gate of a MOSFET is insulted from the other nodes by a layer of silicon dioxide, which is an insulator. Too much voltage would however be a bad-bad thing. The main reason for it is to charge and discharge the gate rapidly.