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some dumm question about Schottky diode

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sangel

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what is the main diffrence between Schottky diode and Diode Zener.

I know that both are very similar, but what is the difference.
 
check out: **broken link removed**

6.3 Schottky Diodes

* Barrier potential created at anode silicon-metal interface eliminates charge storage problems
* Metal layer deposited on thin epitaxial layer of N types silicon
* There are no minority carriers so recombination time does not exist and rectification only depends on majority carriers
* Recovery time only influenced by capacitance of silicon-metal interface
* Have relatively low forward voltage drops dependant on doping levels and thus barrier potential (0.2 - 0.9V)
* Leakage currents are higher ( >100mA)
* Low current ratings (1 - 300A)
* Low voltage ratings ( <100V)

6.4 Power Zener Diodes

* Zener diode more highly doped and designed to operate in breakdown region
* Breakdown above ~5V is avalanche rather than zener (limit current and no problem)
* Zener voltage levels over a wide range ( < 300V)
* Continuous power rating over moderate range (250mW - 75W)
* Can be used in transient suppression as a clamp and absorb up to 50kW for limited times
 
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