MOSFET Theory....

In a MOSFET(say n-channel) operating under proper bias,a depletion region is created by the movement of holes into the substrate,thus leaving behind -ve ions...so an E-field should be created directed from the substrate to the oxide(perpendicular to the oxide layer)....
On the other hand,as a +ve V_DS is applied,a depletion region should be created across the drain-channel junction,giving rise to an E-field from the drain to the channel(parallel to the oxide layer)...
Does this mean there are 2 mutualy perpendicular E-fields acting in the depletion layer????

If you put your theory questions in the "Theory" forum, maybe you could get a better response.

Speaking only for myself, I read this "Chat" topic late in the day. At that time, theory is not going to interest me.