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hm...they are both darlinghtons....
i need one with these characteristics as it says in the datashhet
V( BR) CES Collector- Emitter Breakdown
IC = 100 mA, IB = 0 30 V
ICBO Collector- Cutoff Current VCB = 30 V, IE = 0 100 nA
IEBO Emitter- Cutoff Current VEB = 8.0 V, IC = 0 100 nA
hFE DC Current Gain IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
VCE( sat) Collector- Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V
VBE( on) Base- Emitter On Voltage IC = 100 mA, VCE = 5.0 V 2. 0 V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
hope i make myself a bit more clear