How to design such amplify using 0.18um CMOS technology

[kun]

Supply voltage +/-1.0V
power<500uW
low-frequency gain 30-50dB
maxiumum gain variation(0<f<20MHz,0C<T<80C) <+/-1dB
differential Output Swing >+/-1.2V

 

[Pilot]

What do you want to know? What are you trying to do?

Listing the information you have is insufficient.

How a device is made or to what scale - 0.18um - has very little to do with a circuit you may wish to make.

Have you a particular device(s) in mind? Have you located the datasheet or applications note for the device(s)?

 

[eeglp]

Thanks

The tesmc018 file is attached .
I want to design a variable-gain amplifier.In order to meet low power consumption, the total current should be less than 250uA.it is also difficult to reduce the output resistance to meet the maximum gain variation to meet <+/-1 db

 

[eeglp]

Sorry

The tesmc018 file is attached .
I want to design a variable-gain amplifier.In order to meet low power consumption, the total current should be less than 250uA.it is also difficult to reduce the output resistance to meet the maximum gain variation to meet <+/-1 db
MOSIS file tsmc-018/t29b_mm_non_epi-params.txt
MOSIS PARAMETRIC TEST RESULTS

RUN: T29B (MM_NON-EPI) VENDOR: TSMC
TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns


INTRODUCTION: This report contains the lot average results obtained by MOSIS
from measurements of MOSIS test structures on each wafer of
this fabrication lot. SPICE parameters obtained from similar
measurements on a selected wafer are also attached.

COMMENTS: DSCN6M018_TSMC


TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS

MINIMUM 0.27/0.18
Vth 0.51 -0.51 volts

SHORT 20.0/0.18
Idss 546 -256 uA/um
Vth 0.51 -0.51 volts
Vpt 4.8 -5.5 volts

WIDE 20.0/0.18
Ids0 13.2 -6.7 pA/um

LARGE 50/50
Vth 0.43 -0.42 volts
Vjbkd 3.2 -4.1 volts
Ijlk <50.0 <50.0 pA
Gamma 0.53 0.62 V^0.5

K' (Uo*Cox/2) 171.4 -34.7 uA/V^2
Low-field Mobility 397.10 80.39 cm^2/V*s

COMMENTS: Poly bias varies with design technology. To account for mask and
etch bias use the appropriate value for the parameters XL and XW
in your SPICE model card.
Design Technology XL XW
----------------- ------- ------
SCN6M_DEEP (lambda=0.09) -0.02 -0.01
thick oxide -0.03 -0.01
TSMC18 -0.02 0.00
thick oxide -0.02 0.00
SCN6M_SUBM (lambda=0.10) -0.04 0.00
thick oxide -0.07 0.00


FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS
Vth Poly >6.6 <-6.6 volts



PROCESS PARAMETERS N+ACTV P+ACTV POLY N+BLK PLY+BLK MTL1 MTL2 UNITS
Sheet Resistance 6.7 7.5 7.8 59.2 337.1 0.08 0.08 ohms/sq
Contact Resistance 11.3 11.8 10.2 6.59 ohms
Gate Oxide Thickness 40 angstrom


PROCESS PARAMETERS MTL3 POLY_HRI MTL4 MTL5 MTL6 N_WELL UNITS
Sheet Resistance 0.08 1929.0 0.08 0.08 0.03 925 ohms/sq
Contact Resistance 11.97 17.82 23.86 26.28 ohms

COMMENTS: BLK is silicide block.


CAPACITANCE PARAMETERS N+ACTV P+ACTV POLY M1 M2 M3 M4 M5 M6 M5P N_WELL UNITS
Area (substrate) 971 1162 105 38 18 13 8 8 3 67 aF/um^2
Area (N+active) 8526 53 19 13 11 9 8 aF/um^2
Area (P+active) 8214 aF/um^2
Area (poly) 63 16 10 7 5 4 aF/um^2
Area (metal1) 35 14 9 6 5 aF/um^2
Area (metal2) 37 14 9 6 aF/um^2
Area (metal3) 41 15 9 aF/um^2
Area (metal4) 38 13 aF/um^2
Area (metal5) 33 1010 aF/um^2
Area (no well) 138 aF/um^2
Fringe (substrate) 258 203 -- 59 53 42 23 -- aF/um
Fringe (poly) 66 38 28 23 20 17 aF/um
Fringe (metal1) 53 34 22 19 aF/um
Fringe (metal2) 53 35 27 22 aF/um
Fringe (metal3) 53 35 28 aF/um
Fringe (metal4) 55 35 aF/um
Fringe (metal5) 57 aF/um
Overlap (N+active) 716 aF/um
Overlap (P+active) 679 aF/um



CIRCUIT PARAMETERS UNITS
Inverters K
Vinv 1.0 0.75 volts
Vinv 1.5 0.79 volts
Vol (100 uA) 2.0 0.08 volts
Voh (100 uA) 2.0 1.62 volts
Vinv 2.0 0.83 volts
Gain 2.0 -24.39
Ring Oscillator Freq.
D1024_THK (31-stg,3.3V) 291.97 MHz
DIV1024 (31-stg,1.8V) 359.22 MHz
Ring Oscillator Power
D1024_THK (31-stg,3.3V) 0.07 uW/MHz/gate
DIV1024 (31-stg,1.8V) 0.02 uW/MHz/gate

COMMENTS: DEEP_SUBMICRON




 T29B SPICE BSIM3 VERSION 3.1 PARAMETERS

SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8

* DATE: Dec 9/02
* LOT: T29B WAF: 6003
* Temperature_parameters=Default
.MODEL CMOSN NMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 4E-9
+XJ = 1E-7 NCH = 2.3549E17 VTH0 = 0.3627858
+K1 = 0.5873035 K2 = 4.793052E-3 K3 = 1E-3
+K3B = 2.2736112 W0 = 1E-7 NLX = 1.675684E-7
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 1.7838401 DVT1 = 0.5354277 DVT2 = -1.243646E-3
+U0 = 263.3294995 UA = -1.359749E-9 UB = 2.250116E-18
+UC = 5.204485E-11 VSAT = 1.083427E5 A0 = 2
+AGS = 0.4289385 B0 = -6.378671E-9 B1 = -1E-7
+KETA = -0.0127717 A1 = 5.347644E-4 A2 = 0.8370202
+RDSW = 150 PRWG = 0.5 PRWB = -0.2
+WR = 1 WINT = 1.798714E-9 LINT = 7.631769E-9
+XL = -2E-8 XW = -1E-8 DWG = -3.268901E-9
+DWB = 7.685893E-9 VOFF = -0.0882278 NFACTOR = 2.5
+CIT = 0 CDSC = 2.4E-4 CDSCD = 0
+CDSCB = 0 ETA0 = 2.455162E-3 ETAB = 1
+DSUB = 0.0173531 PCLM = 0.7303352 PDIBLC1 = 0.2246297
+PDIBLC2 = 2.220529E-3 PDIBLCB = -0.1 DROUT = 0.7685422
+PSCBE1 = 8.697563E9 PSCBE2 = 5E-10 PVAG = 0
+DELTA = 0.01 RSH = 6.7 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 XPART = 0.5
+CGDO = 7.16E-10 CGSO = 7.16E-10 CGBO = 1E-12
+CJ = 9.725711E-4 PB = 0.7300537 MJ = 0.365507
+CJSW = 2.604808E-10 PBSW = 0.4 MJSW = 0.1
+CJSWG = 3.3E-10 PBSWG = 0.4 MJSWG = 0.1
+CF = 0 PVTH0 = 4.289276E-4 PRDSW = -4.2003751
+PK2 = -4.920718E-4 WKETA = 6.938214E-4 LKETA = -0.0118628
+PU0 = 24.2772783 PUA = 9.138642E-11 PUB = 0
+PVSAT = 1.680804E3 PETA0 = 2.44792E-6 PKETA = 4.537962E-5 )
*
.MODEL CMOSP PMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 4E-9
+XJ = 1E-7 NCH = 4.1589E17 VTH0 = -0.4064886
+K1 = 0.5499001 K2 = 0.0389453 K3 = 0
+K3B = 11.4951756 W0 = 1E-6 NLX = 9.143209E-8
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 0.5449299 DVT1 = 0.3160821 DVT2 = 0.1
+U0 = 117.9612996 UA = 1.64867E-9 UB = 1.165056E-21
+UC = -1E-10 VSAT = 2E5 A0 = 1.7833459
+AGS = 0.407511 B0 = 1.314603E-6 B1 = 5E-6
+KETA = 0.0137171 A1 = 0.4610527 A2 = 0.6597363
+RDSW = 364.9443889 PRWG = 0.5 PRWB = -0.1129203
+WR = 1 WINT = 0 LINT = 2.007556E-8
+XL = -2E-8 XW = -1E-8 DWG = -2.835566E-8
+DWB = 8.003075E-9 VOFF = -0.1064646 NFACTOR = 2
+CIT = 0 CDSC = 2.4E-4 CDSCD = 0
+CDSCB = 0 ETA0 = 0.0141703 ETAB = -0.0398356
+DSUB = 0.4441401 PCLM = 2.2364512 PDIBLC1 = 9.167645E-4
+PDIBLC2 = 0.0209189 PDIBLCB = -9.568266E-4 DROUT = 9.976778E-4
+PSCBE1 = 1.731161E9 PSCBE2 = 5E-10 PVAG = 14.337819
+DELTA = 0.01 RSH = 7.5 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 XPART = 0.5
+CGDO = 6.79E-10 CGSO = 6.79E-10 CGBO = 1E-12
+CJ = 1.176396E-3 PB = 0.8607121 MJ = 0.4163285
+CJSW = 2.135953E-10 PBSW = 0.6430918 MJSW = 0.2654457
+CJSWG = 4.22E-10 PBSWG = 0.6430918 MJSWG = 0.2654457
+CF = 0 PVTH0 = 4.364418E-3 PRDSW = 4.4192048
+PK2 = 3.104478E-3 WKETA = 0.0270296 LKETA = 2.038008E-3
+PU0 = -2.3639825 PUA = -8.41675E-11 PUB = 1E-21
+PVSAT = -50 PETA0 = 1E-4 PKETA = -1.444802E-3 )
*

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[sevil_gunesh]

hi
i want calculate power in hspice my self whit hspice library account and compare whit hspice result.but i dont khow what is ferequency in library of .18um.and this is my hspice code
.option post accurate
.op
.model nch nmos level=27 soslev=2
+vto=0.814 tox=0.34e-7 theta=0.55e-1
+fb=0.15 ec=0.3e7 a=0.1e-6
+uo=370 cgso=0.46e-9 cgdo=0.46e-9
+rsh=25 ld=0.3e-6
*
.model pch pmos level=27 soslev=2
+vto=-0.7212 tox=0.34e-7 theta=0.75e-1
+fb=0.0 ec=0.75e7 a=0.1e-6
+uo=215 cgso=0.36e-9 cgdo=0.36e-9
+rsh=80 ld=0.2e-6
*
.tran 5ns 1us 50ns
*========================================================================================
.MEASURE TRAN avgpwr AVG POWER FROM=0ns TO=15ns
.MEASURE TRAN peakpwr MAX POWER FROM=0ns TO=15ns
.meas tran RMS_Ckt_Pwr RMS power
.PARAM vvddpar=3.3
.measure TRAN iavg AVG i(mnb) FROM=0ns TO=15ns
.measure TRAN power PARAM='iavg*vvddpar'
.print tran p(mna)
.print tran p(mnb)
vdd vdd gnd 3.3
mpa out a vdd vdd pch 8u 4u
mpb out b vdd vdd pch 8u 4u
mna out a x gnd nch 8u 8u
mnb x b gnd gnd nch 8u 8u
va a gnd pulse 0 3.3 1n 50p 50p 2ns 20ns
vb b gnd pulse 0 3.3 2n 100p 100p 4ns 20ns
.end



i wait for u answer

 

[sevil_gunesh]

and whit which formulla?how i can calculate i(sub) myself?i mean i dont khow what is kt and q and e in library/?it is level 27.
thanks

 

[alec_t]

Supply voltage +/-1.0V.....differential Output Swing >+/-1.2V

These two properties are incompatible.

 

[diod]

.lib 'all_mos.l' tt
.GLOBAL VDD GND
VDD VDD GND 5
MNA OUT INVA Y GND nch W=10u L=1u
MNB Y INVB GND GND nch W=10u L=1u
MNA1 OUTA INVA GND GND nch W=10u L=1u
MPA1 OUTA INVA VDD VDD pch W=10u L=1u
MNB1 OUTB INVB GND GND nch W=10u L=1u
MPB1 OUTB INVB VDD VDD pch W=10u L=1u
MNA2 OUT OUTA Z GND nch W=10u L=1u
MNB2 Z OUTB GND GND nch W=10u L=1u
MPA OUT INVA X VDD pch W=10u L=1u
MPB OUT INVB X VDD pch W=10u L=1u
MPA2 X OUTA VDD VDD pch W=10u L=1u
MPB2 X OUTB VDD VDD pch W=10u L=1u
.cload out gnd 50fF
.TRAN 50PS 10NS
.measure tran avgpwr avg p(mna) from=1n to=3n
.measure TRAN iavg AVG i(mnA) FROM=1ns TO=3ns
VA INVA GND PULSE 0 5 1ns 50ps 50ps 4.1ns 8ns
VB INVB GND PULSE 0 5 1ns 200ps 200ps 2ns 8ns
.END
what is wrong with this?
this is my xor2 code in hspice it hasent error but it has warning(*warning** dc voltage reset to initial transient source value in source 0:va new dc= 0.1800D+01PARAM SUPPLY=5
and i dont khow why in avanwave my output isnt correct