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The tesmc018 file is attached .
I want to design a variable-gain amplifier.In order to meet low power consumption, the total current should be less than 250uA.it is also difficult to reduce the output resistance to meet the maximum gain variation to meet <+/-1 db
The tesmc018 file is attached .
I want to design a variable-gain amplifier.In order to meet low power consumption, the total current should be less than 250uA.it is also difficult to reduce the output resistance to meet the maximum gain variation to meet <+/-1 db
MOSIS file tsmc-018/t29b_mm_non_epi-params.txt
MOSIS PARAMETRIC TEST RESULTS
INTRODUCTION: This report contains the lot average results obtained by MOSIS
from measurements of MOSIS test structures on each wafer of
this fabrication lot. SPICE parameters obtained from similar
measurements on a selected wafer are also attached.
COMMENTS: DSCN6M018_TSMC
TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS
LARGE 50/50
Vth 0.43 -0.42 volts
Vjbkd 3.2 -4.1 volts
Ijlk <50.0 <50.0 pA
Gamma 0.53 0.62 V^0.5
K' (Uo*Cox/2) 171.4 -34.7 uA/V^2
Low-field Mobility 397.10 80.39 cm^2/V*s
COMMENTS: Poly bias varies with design technology. To account for mask and
etch bias use the appropriate value for the parameters XL and XW
in your SPICE model card.
Design Technology XL XW
----------------- ------- ------
SCN6M_DEEP (lambda=0.09) -0.02 -0.01
thick oxide -0.03 -0.01
TSMC18 -0.02 0.00
thick oxide -0.02 0.00
SCN6M_SUBM (lambda=0.10) -0.04 0.00
thick oxide -0.07 0.00
FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS
Vth Poly >6.6 <-6.6 volts
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