The IRF9540 has an on resistance of 0.11Ω, ten times the MOSFET I used in the simulation. When I substituted a MOSFET with a 0.105Ω on resistance the simulated dissipation was about 12W, which would warm things up a bit. So you need a MOSFET with a lower ON resistance.
I used a sense resistor of 0.01Ω which is a lot smaller than the 0.22Ω you used. 0.22Ω will waste a lot of power at high currents.
It sounds like it's significantly different than what I simulated.
What's a "high grade transistor"?
What's a "matrix PCB"?
What is the heat sink you are using?
Can the choke carry 10A without saturating? If the choke saturates, the transistor power dissipation will become very high.
Do you have an oscilloscope to observe the waveforms?
Certainly theory isn't going to work well if the actual circuit has arbitrary differences from the simulated circuit.
Post a circuit diagram of what you did, if you can.
I used a sense resistor of 0.01Ω which is a lot smaller than the 0.22Ω you used. 0.22Ω will waste a lot of power at high currents.
It sounds like it's significantly different than what I simulated.
What's a "high grade transistor"?
What's a "matrix PCB"?
What is the heat sink you are using?
Can the choke carry 10A without saturating? If the choke saturates, the transistor power dissipation will become very high.
Do you have an oscilloscope to observe the waveforms?
Certainly theory isn't going to work well if the actual circuit has arbitrary differences from the simulated circuit.
Post a circuit diagram of what you did, if you can.