Hey,
There's something which i dont quite understand about VCE in BJT's datasheet.
I take for example the P2N2222A datasheet.
1.
in the hFE category, for IC = 150mA & VCE = 10V* (2% pulse), hFE is guaranteed to be between 100 to 300.
If I apply continuous 10V voltage on VCE, would hFE remain between 100 to 300?
Do they apply a voltage pulse insead of continuous voltage to keep the BJT cool, and measuring hFE only when the
pulse is at its on state?
2.
In the VCEsat row, they claim that for IC=150mA & VCE = 10V*, VCEsat is 0.3V max.
I dont understand, if they apply 2% 10V pulse on the CE junction, shouldnt VCE be the exact applied pulse?
I dont understand how they reached 0.3V.
Thanks.
There's something which i dont quite understand about VCE in BJT's datasheet.
I take for example the P2N2222A datasheet.
1.
in the hFE category, for IC = 150mA & VCE = 10V* (2% pulse), hFE is guaranteed to be between 100 to 300.
If I apply continuous 10V voltage on VCE, would hFE remain between 100 to 300?
Do they apply a voltage pulse insead of continuous voltage to keep the BJT cool, and measuring hFE only when the
pulse is at its on state?
2.
In the VCEsat row, they claim that for IC=150mA & VCE = 10V*, VCEsat is 0.3V max.
I dont understand, if they apply 2% 10V pulse on the CE junction, shouldnt VCE be the exact applied pulse?
I dont understand how they reached 0.3V.
Thanks.
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