Not sure what your asking, what you mean by "vis-a-vis", I assume run 100 ohms "vice" means "instead of" which bleeds of the gate charge quicker, but causes my sim to take for ever to run, but 110 ohms works fine. Also makes for a shorter period of power dissipation.
Kinarfi
I understand the power dissipation during transition from on to off and off to on. Is my thinking that the the knee (circled in white on drawing) in the voltage across Vsd is do the change of voltage, Vsd, and acts as if gate discharge is decreasing slower than it actual is, assuming that is constant, Or does the gate discharge rate actually slow down? Or is it something else entirely that causes that knew?
I used a new schematic, the IRF4905 came up beautifully, the IRF4905 was the only item on the page when I tried to run it and got the box at the bottom of the picture. What is the extension for the down loaded subcrkt supposed to be "IRF4905.txt" that goes into LTC\lib\sub\MOSFET
Just to be sure, I take your file, copy and save as IRF4905.ASY and put in new folder LTC\lib\sym\MYSTUFF\MOSFET
Then I take your file, copy and save as IRF4905.SUB and put in in LTC\lib\sub\MOSFETThen I take my down loaded subcrkt file IRF4905pbf.txt and put it in LTC\lib\sub\MOSFET also.
Do I change the name to match the the others or leave it alone.
Thanks
Kinarfi
Any one know why I getting an attack warning when I from Google when I open the site?
Starting over and redoing you instructions.
Still having to .include irf4905.txt
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