semiconductor question

I do not understand the phenomenon of reverse bias of a diode which causes a barrier at the junction. Theory states that p type ions are accumulated at the n layer side and n type ions are accumulated at the p layer side under reverse bias. My question is how can it be possible. Wont the electrons in the n layer be attracted to the p ions and try to nutralize them. The same happening on the p layer side. Am i missing out something?

when you reverse bias a PN junction the negative terminal of the battery is connected to the P material and the positive terminal of the battery is connected to the N material. the polarity of the bias voltage in this case reinforces the internal barrier field at the junction. the diffusion current is inhibited and the depletion region widens.