Heidi
Member
Dear friends,
Before you give the answer to the question in the title, could you please tell me whether the BJT in the circuit below will be destroyed by the inductor's large negative voltage when the switch is opened? I mean when a large voltage is applied between the collector and the emitter while the base is floating, will a BJT be destroyed?
Here's what I know: at time of 2ms, when the switch is opened, the inductor is trying to maintain its current by giving a large negative voltage which is applying between node c and ground. There are capatances between B-C and B-E junctions of the BJT, when leaving the base not connecting to anything, only a large voltage between C and E would cause damage to the BJT? If so, how does it work?
When I add a zener diode in parallel with the BJT, the 1N750 has a berakdown voltage 0f 4.7V at a testing current of 20.245mA,
will it work?
Thank you.
Before you give the answer to the question in the title, could you please tell me whether the BJT in the circuit below will be destroyed by the inductor's large negative voltage when the switch is opened? I mean when a large voltage is applied between the collector and the emitter while the base is floating, will a BJT be destroyed?
Here's what I know: at time of 2ms, when the switch is opened, the inductor is trying to maintain its current by giving a large negative voltage which is applying between node c and ground. There are capatances between B-C and B-E junctions of the BJT, when leaving the base not connecting to anything, only a large voltage between C and E would cause damage to the BJT? If so, how does it work?
When I add a zener diode in parallel with the BJT, the 1N750 has a berakdown voltage 0f 4.7V at a testing current of 20.245mA,
will it work?
Thank you.