Mosaic
Well-Known Member
Hi all:
I was doing a sim with an NFET switch into an inductive load. I noticed that adding bypass caps across the Drain-Source can 'protect' the NFET from avalanching due to kickback.
I note that fast diodes are usually used for this purpose. But what does the effect of drain/source Capacitance (10uF?) have on the MOSFET operation, if any, and why are the diodes the preferred solution?
I was doing a sim with an NFET switch into an inductive load. I noticed that adding bypass caps across the Drain-Source can 'protect' the NFET from avalanching due to kickback.
I note that fast diodes are usually used for this purpose. But what does the effect of drain/source Capacitance (10uF?) have on the MOSFET operation, if any, and why are the diodes the preferred solution?