Metallic glasses are used to make computer memories and magneto resistance sensors because of their
high electrical resistance.why low electrical resistance materials can't be used in the preparation of computer
memories or storage elements?
Metallic glasses are used to make computer memories and magneto resistance sensors because of their
high electrical resistance.why low electrical resistance materials can't be used in the preparation of computer
memories or storage elements?
The bits in a typical non-volatile memory device are stored as an electron charge in small capacitors in the device. The insulators (silicon oxide) surround the "plates" (floating gate in a EEPROM) in the capacitor. In other devices the charge is stored deep in a "well" that maintains the small voltage even when the power is off.
In a DRAM device the same thing is used but with a different structure for faster access.
Both insulators and conductors are required for a modern memory devices, so both are actually used in the preparation of modern memory, why do you think otherwise?