Can you please solve the problem attached.It is very confusing to me
View attachment 149174
This question is tricky. The reasons follow.
The design overdrives the base more than the collector, but this part is irrelevant. Even if it is a poor design, you must still answer the question.
The battery symbol, Vcc is shown backwards for a PNP, so it must be negative.
You may assume -0.1V drop for Vce or Vec=0.1 , although at this low current, Vec = 0 is closer to the truth. (20mV) as a very low current saturated switch.
The base current is irrelevant, but emitter voltage determines the KVL drop to Vcc.
You need to know that Icq is always determined by Vbe in linear mode and if saturated and we neglect Vce* then
Icq= (Vcc-Ve)/Rc and Ie=Ic+Ib means Ic is not controlled by Ib.
Since Icq was given +ve , we will subtract it here only , Vbe = -0.7 V.
Thus all you need Ve = Vb + Vbe = -7.3 , Vc~ Ve - 0.1 ( -ve for PNP)
V(Rc) = 3 mA * 2k = -6V
Thus Vcc = -7.4 - 6V = -13.4
However if Vb=-8 then assuming 0.65V, But for approx. use 0.7 or 0.6 for single precision.
Ve=-7.3 as the emitter is more +ve with P-N junction for emitter-base.
Then from Ohm's Law V/R=I= -7.3 / 500 Ohms 14.6 mA approx. for base current is much more than Icq.
Yes weird, unconventional, tricky, poor design, but still answerable.
Other info
Here as a switch although all data sheets by convention will use Ic/Ib = 10 for Vce(sat) specs, or = 20, 30, 50 and hfe must be ~10 times this ratio or more to see these specs..
*When saturated, the collector PN junction which was reverse biased as a current source is now forward biased as a voltage switch across C-E. Vbe (or Veb) is slightly more than Vce due to a higher bulk resistance. You can estimate Vce(sat) by knowing the approx.
Rce = Vce(sat)/Ic which for small transistors ranges from 1 to 5 Ohms. Often we just assume,
|Vce|=0.1V before calculating but it is actually the difference in two diode voltages due to Rce * Ic