Not a chance, esr meters test for low impedances, using 100KHz (usually) and low signal levels, far too low to trigger a silicon junction (and for that very reason).
Try an Ohmeter that has a "diode" test mode. It will put enough DC bias on the device under test so you should be able to see the change in "resistance" due to illumination falling on the junction.
Thanks Mike.
There is a voltage drop in diode mode with illumination.
Opposite the transistor, I'm not measuring any voltage drop on the diode using my multi meter but the esr meter is identifying the diode and measuring Uf=1.14v and C=18pF .
Upon rechecking the diode with the multi meter in diode test, I'm measuring a 2 volt drop which seems excessive.
Opposite the transistor, I'm not measuring any voltage drop on the diode using my multi meter but the esr meter is identifying the diode and measuring Uf=1.14v and C=18pF .
An ESR meter wouldn't give a value of 1.14V, or indeed a capacitance of 18pF, so presumably you're NOT using an ESR meter, but a component tester? - an entirely different beast.
A component tester should test a photo-transistor just as a normal transistor, and if you run it multiple times, under light and dark, you should see a difference.
-. A 4.7k resistor, with one end tied to +5V, the other end tied to the phototransistor's collector.
-. the phototransistor's emitter tied to the +5V return.
-. You may try other resistor values later.
Measure with a DMM the collector-emitter voltage, with different light levels, including as much darkness as you can achieve.
Getting about 2vdc drop in the presence of light, appears as if the transistor is working but the diode is dead so I've ordered a new device.
Thanks for the help.