This is an analysis of SiC FET disadvantages. Would you say that it is accurate?
The analysis is from the following document....
__________________________________ _____
Basics of sic power devices.
by ROHM
___ ____________________________________
….ESD
Page 21 of the above says that SiC is more susceptible to ESD than Si FETs
...VGS(th) DRIFT OVER TIME
Page 19 states that there is possibly an issue of VGS(TH) drift over time (getting lower).
This is even more so if a negative off state gate drive is used.
….Short circuit withstand
Page 20 says SiC has less Short circuit withstand than Si FETs
...High internal gate resistance
Page 17 says that the Rgate is higher for SiC FETs than Si FETs.
As such, sic FETs are more susceptible to spurious turn-on.
Also, the low VGS(TH) of Sic fets means that you have to use external gate
resistors to damp out any gate drive ringing...but due to the high internal R(gate)
of Sic you cant actually use much external gate resistance. So this creates a problem
...Negative gate drive
There's often a need for negative gate drive with sic FETs. But since the max neg voltage is often as low as minus 2V,
The negative gate drive can be a problem.
The analysis is from the following document....
__________________________________ _____
Basics of sic power devices.
by ROHM
___ ____________________________________
….ESD
Page 21 of the above says that SiC is more susceptible to ESD than Si FETs
...VGS(th) DRIFT OVER TIME
Page 19 states that there is possibly an issue of VGS(TH) drift over time (getting lower).
This is even more so if a negative off state gate drive is used.
….Short circuit withstand
Page 20 says SiC has less Short circuit withstand than Si FETs
...High internal gate resistance
Page 17 says that the Rgate is higher for SiC FETs than Si FETs.
As such, sic FETs are more susceptible to spurious turn-on.
Also, the low VGS(TH) of Sic fets means that you have to use external gate
resistors to damp out any gate drive ringing...but due to the high internal R(gate)
of Sic you cant actually use much external gate resistance. So this creates a problem
...Negative gate drive
There's often a need for negative gate drive with sic FETs. But since the max neg voltage is often as low as minus 2V,
The negative gate drive can be a problem.
