We are testing a 300kW converter made with 12 modules of 25kW in parallel.
Each module has a full bridge of 4 IXFN150N65X2 transistors. The drivers are made with HCPL3120 opto-drivers
We have dangerous oscillations in gate, at frequencies between 40MHz and 50MHz, which increase with voltage and power. We can not eliminate them with ferrite toroidals, and the only one that diminishes its amplitude is to place a RC of 4.7ohms and 10nF between the driver and the mosfet, which excessively increases the consumption of the driver.
In what other way we could improve it?
Each module has a full bridge of 4 IXFN150N65X2 transistors. The drivers are made with HCPL3120 opto-drivers
We have dangerous oscillations in gate, at frequencies between 40MHz and 50MHz, which increase with voltage and power. We can not eliminate them with ferrite toroidals, and the only one that diminishes its amplitude is to place a RC of 4.7ohms and 10nF between the driver and the mosfet, which excessively increases the consumption of the driver.
In what other way we could improve it?