Depends how you classify this and in what applications. Nowdays because of the simplicity and ubiquity of the fabrication process for MOSFETs and the miniturisation capabilities of the MOSFET (particularly when compared to BJTs), particularly in ICs and MSI, LSI and VLSI systems, MOSFET is the device of choice. Given MOSFETs in VLSI systems might total several hundred million on a single chip I would suggest that MOSFETs are by far more common than BJTs in both numbers and application diversity.Both have advantages, and both have disadvantages - but bipolar are FAR more common than FET's.
You don't need to 'manually tune' the resistors, you just use identical values in order to make them share the current equally. This is also essential on some types of audio output FET's as well - essentially it's because of the different temperature coefficients of the types of devices.With parallel BJTs, the best BJT will hog the current from the other "not so good BJTs" and burn out and the cycle repeats with the remaining BJTs until they are all burned. This is similar to parallel diodes. You can correct for imbalances by manually tuning resistors in series with each BJT, but for power applications that's needing massive resistors and wasting lots of power.
No, I would not say MOSFETS are less forgiving. In fact they have some characteristics that make them a bit harder to work with, like self latching and their sensitivity to ESD.Is it true to say that Mosfets is much less forgiving and less idiot proof?
That they ideally need a mosfet driver?
and they are more prone to static dammages?
Is any component really temperature variation independent? I don't think so...mosfet is temp variation independent.
MOSFETs have a linear region and a saturation region (see graph). Once they reach their saturation region, they're fully on.Help me out with this "fully turned on" business of FET's, as I came across this the other day. What indicates a fully turned on condition? I haven't done much in the way of power systems.