Both have advantages, and both have disadvantages - but bipolar are FAR more common than FET's.
With parallel BJTs, the best BJT will hog the current from the other "not so good BJTs" and burn out and the cycle repeats with the remaining BJTs until they are all burned. This is similar to parallel diodes. You can correct for imbalances by manually tuning resistors in series with each BJT, but for power applications that's needing massive resistors and wasting lots of power.
Is it true to say that Mosfets is much less forgiving and less idiot proof?
That they ideally need a mosfet driver?
and they are more prone to static dammages?
mosfet is temp variation independent.
Help me out with this "fully turned on" business of FET's, as I came across this the other day. What indicates a fully turned on condition? I haven't done much in the way of power systems.