I know that IBM somewhere in their statement, stated (duh ) that fabrication technologies lower than 22nm that memristance will be crucial in circuit design, so my guess is that it becomes more evident in smaller circuits.
So it probably happens in large circuits, just not as evident. So you will either have to have extremely sensitive circuits or very tiny produced devices (<90nm)
I know that IBM somewhere in their statement, stated (duh ) that fabrication technologies lower than 22nm that memristance will be crucial in circuit design, so my guess is that it becomes more evident in smaller circuits.
So it probably happens in large circuits, just not as evident. So you will either have to have extremely sensitive circuits or very tiny produced devices (<90nm)
But as far as scalability it's still exists only at 90nm or below.
I have no comprehension. I was asked the question above when I started this and still I get the varying statement's. I do however have some here at the University that I could ask but I thought I would open it up for discussion.
I have read more now and understand there is a limit to it. Voltage and Amperage above this in a circuit commonly manufactured in mm would be impossible to simulate.
I can't tell if it's a resistor or a diode or Capacitor or transistor. All of the above ?
In order to reproduce this effect there will have to be some electromagnetic influence and processor Like in a RFID card or some other means to have the similar doping effect producing hysteretic behavior in the memristor ?