LTspice Diode capacitance varies with voltage?

[Flyback]

Hi,
For the VS-E5TH1506 diode in LTspice, its spice model is as follows...

.model VS-E5TX1506 D(Is=476.13E-6 N=4.4507 Rs=4.4171E-3 Ikf=.92778 Cjo=220.63E-12 M=.40833 Vj=.3925 Isr=10.010E-21 Nr=4.9950 Bv=716.57 Ibv=25.865E-3 tt=16.371E-9 Vp=0.11 Xti=13 Tikf=0.08 Trs1=0.0005 Iave=15 Vpk=600 mfg=Vishay type=FastRecovery)

...the capacitance is 220pF as can be seen.....but at 200V or so, the datasheet says that goes down to some 20pF....will LTspice depict that?

VS-E5TH1506 diode

https://www.vishay.com/docs/96751/vs-e5th1506-m3.pdf

Likewise for the IPB200N25N3 FET...

.model IPB200N25N3 VDMOS(Rg=2.3 Vto=3.7 Rd=15.69m Rs=878u Rb=2.01m Kp=146.6 Lambda=0.015 Cgdmin=19p Cgdmax=0.8n A=0.5 Cgs=5.33n Cjo=8n M=0.48 Is=50.7p VJ=0.9 N=1.12 TT=150n ksubthres=.1 mfg=Infineon Vds=250 Ron=20m Qg=64n RthetaJA=40 Imult=35 Iexponent=.4 R6=8.62m C6=.798u R5=16m C5=.4u R4=93.2m C4=5.36m R3=189m C3=21.2m R2=198m C2=226m R1=28.6m C1=3.72m)

What is its Cds? is it the "Cjo"? (8nF?) Does it vary with voltage as it does in real life?

IPB200N25N3 FET

https://www.infineon.com/dgdl/Infineon-IPP_B_I_200N25N3_G-DataSheet-v02_05-EN.pdf?fileId=db3a3043243b5f17012496b87e9f1971

 

[ronsimpson]

Make a "variable capacitance diode circuit" in SPICE and see what happens when you add 3 to 200V DC on the diode.
There is a L that resonates with the C of the diode. A larger capacitor keeps the DC from getting to the inductor.
Look at radio front end circuits.

Please tell us what happens.

 

[Tony Stewart]

A well written prompt into Bing uses openAI technology chat4.0 gave me this following result.
my answer : yes

Bing: The dc characteristics of the diode are determined by the parameters IS and N. An ohmic resistance, RS, is included. Charge storage effects are modeled by a transit time, TT, and a nonlinear depletion layer capacitance which is determined by the parameters CJO, VJ, and M.