I'm using a type of P-channel mosfet in my project.I find this mosfet is easily damaged whose gate and source breakdown.I guess the cause of ESD.There is no High voltage and no big current occur in Mosfet,but the defect samples can be picked up by our design fixture.if so,what's the relationship between the Gate and ESD,I know Mosfet is sensitive static parts,but How much ESD will destroy the Mosfet,I don't know?Looking forward for your help.Thanks!
Best regards