The current that the device passes is based, to a degree, on the Rdson value of the
MOSFET (and, of course, on the load resistance and bus voltage). In addition to being
dependent on the "gate drive voltage," the Rdson value will increase as the MOSFET’s
junction temperature increases. So, if a MOSFET gets hot, it will pass less current
because of a increasing Rdson value. Therefore, if two (or more) MOSFETs are connected in parallel, and one begins to heat
up, it will eventually begin drawing less current than the cooler MOSFET of the pair, and
subsequently cool down. This is assuming that all of the MOSFETs paralleled are of the
same type; 100A plus H-bridge circuits can be realized with parallel MOSFETs and an
H-bridge driver like the HIP4081A.