Just to make sure, in order for our chosen MOSFET to be active a voltage of 4.5 V should be supplied to its gate correct?
Hy cmore82,
In engineering it greatly simplifies things and avoids confusion if you are specific (not aimed at you- just a general point).
(1) There are two sexes of MOSFETs: N chanel MOSFETs (NMOSFETs) and P channel MOSFETs (PMOSFETs).
(2) NMOSFETs and PMOSFETs are exactly the same except they operate with opposite voltages.
(3) With an NMOSFET the drain must be more positive than the source. Under that condition if you make the gate the same voltage as the drain no current will flow from the drain to the source. If you make the gate more positive than the source, current will flow from the drain to the source. Note that the gate is insulated from the drain and source, so the gate does not take any current.
(4) With a PMOSFET the drain must be more negative than the source. Under that condition if you make the gate the same voltage as the drain no current will flow from the drain to the source. If you make the gate more negative than the drain, current will flow from the source to the drain. Note that the gate is insulated from the drain and source, so the gate does not take any current.
(5) Your circuit has a PMOSFET which, when turned on passes current from the positive supply line into the heaters.
(6) The voltage needed to turn a MOSFET on (gate threshold voltage) varies between MOSFETS and ranges from 12V to as low as 200mV. I chose a PMOSFET for your circuit that has a gate threshold voltage between 0.5 Volts (500mV) and 1.6V. Notice that a PMOSFET that had a gate threshold voltage of 12V would be totally useless because the supply line will only be 3V to 4V from a LiIon battery thus the MOSFET would never turn on.
(7) Assume that the battery voltage is 3.6V, which is the normal voltage for a LiIon battery. The PMOSFET source will be at 3.6V and the PMOSFET drain is connected to zero volts via a heater bank.
(8) If the MCU output is high (3.6V) there will be no difference between the PMOSFET gate and drain, thus the PMOSFET will be turned off and no current will flow from the PMOSFET source to the PMOSFET drain so no current will flow into the heater bank.
(9) If the MCU output is low (0V) the PMOSFET gate will be 3.6V more negative than the PMOSFET source, so the PMOSFET will be turned hard on and current will flow from the PMOSFET drain to the PMOSFET source and down to 0V through the heater bank.
(10) The PMOSFET has been chosen to have a very low resistance (RDS) of 0.002 Ohms (2 mili Ohms) between its source and drain when it is turned on, so that:
(10.1) the power dissipated in the PMOSFET will be low, so the PMOSFET will not exceed its maximum internal temperature of 150 deg Centigrade. Power dissipated = I*I* RDS. In this case the average power dissipated in the PMOSFET will be 4.5A * 4.5A * 0.002 Ohms = 0.0405 Watts (40.5mili W).
(10.2) as the power lost in the PMOSFET is low little power will be wasted, thus battery life will be maximized.
(11) Note that although MOSFETs gate are insulated from the source and drain, there are huge parasitic capacitors inside MOSFETs. As a result you need substantial current to switch MOSFETs on and off fast.
spec