1>so if this the ON voltage of transistor then it should be given value such as Vce sat min 250mV instead of max, that means min. voltage required by device to turn itself ON ?
2> why haven't they given min. collector current that can flow in transistor ?
3> there is a second graph shown in datasheet Hfe vs Ic , does it mean gain of transistor changes when Ic value changes ? and what is that Vce=5V ?
4> why haven't they given transistor characteristic which is between Ic and Vce graph in there data sheet ?
when collector-emitter junction is on (saturated) then base-emitter region must be forward biased, so min. voltage drop would be 0.7V , then what is this 700-900 mV ?
then which region ? is it forward or reverse voltage ?
I don't get it, there are 2 different types of current 1-leakage current when transistor is cutt off region and 2- is reverse bias current , when transistor is in which region ? cutt off,SAT or active region
where are they specified ?