Hi, thanks to all for replies.
I have found this circuit in internet:
I'm interested only to external mosfet driver configuration principle.
It seem safe. The gate is discharged through pnp bjt, and the only device subjected to high voltage is the mosfet.
The circuit is designed to output low voltage, but I think that with the same driver circuitry and feedback I can obtain high voltage for my deflection plates.
With reference to the same Texas Instruments datasheet linked above, I would ask if in the components values calculation of page 10, the "Saturation voltage" Vsat parameter we must consider RDSon X Ipk(switch) with Mosfet instead of power bjt.
I would want to drive CRT because I'm trying to make an analog clock with vector display.
Thanks.
Paolo.