I would like to incorporate a traditional gate resistor to control ringing at the MOSFET gate and additionally a second, perhaps lower value resistor, in series with a diode to provide an alternative lower impedance path between the gate and the driver output when discharging the gate capacitance.
The question: Does the diode need to be sized to support the peak sink current of the gate driver? Intuitively it seems I could reduce the size of the diode because of the 20kHz switching frequency. The 3A SS32 fast diodes I have in the circuit now are almost as large as my 2.5A opto gate drivers.
I hate to take up so much room on the pcb when likely these extra diodes and resistors may not even be necessary. The purpose was to provide the ability to improve turn-off time of the MOSFET slightly.
The question: Does the diode need to be sized to support the peak sink current of the gate driver? Intuitively it seems I could reduce the size of the diode because of the 20kHz switching frequency. The 3A SS32 fast diodes I have in the circuit now are almost as large as my 2.5A opto gate drivers.
I hate to take up so much room on the pcb when likely these extra diodes and resistors may not even be necessary. The purpose was to provide the ability to improve turn-off time of the MOSFET slightly.