simulation and modeling snapback ESD on Pspice Orcad

[CASIDO]

hello everyone

I am about to simulate the characteristics of a high current MOSFET ESD work under stress and for that I need to develop a model created with current source is used to demonstrate the improved accuracy of the simulated IV characteristics for the region linear, normal, and the region avalache "snapback"

After searching the net I found a good document 'look the DOC below' contain a macro Pspice simulation already made, but there are set of mosfet and Gvalue and the source of voltage and current I do not know how to configure this tool, there are more equations.
please anyone has an idea on this Pspice simulation.
thank you

 

[Sceadwian]

The parameter extraction equation is listed in the PDF, all you need is the datasheet values for your Mosfet. What is your question?

 

[CASIDO]

hi Sceadwian
my question is how to complete the macro model of the document telque parameters (m_lit = 0.35, Vaa = 10.5, Bi = 24, n = 1) and the source of voltage and current not to mention the equation of the avalanche multiplication factor model for a well set up and is capable of simulating the experimental IV Characteristics for MOSFET under test in Figure 1 in the document