Source=
https://www.electro-tech-online.com/custompdfs/2013/01/Power_MOSFET_Basics.pdf
During diode reverse recovery, its reverse current also goes to the lower FET in Figure 11, along with the load current; in addition, the reverse recovery di/dt can cause large voltage overshoots (Ldi/dt) due to circuit stray inductance. These voltage overshoots are minimized if the di/dt during the second phase of the trr (after crossing IRM) is kept low. Such a diode is said to have soft recovery. Lower QRR leads to lower switching loss.
This is often the largest single component of switching loss in a switching converter. AOS SDMOS and SRFET have been designed with advanced technology specifically to improve body diode reverse recovery performance with low Qrr and good softness coefficient compare to regular MOSFETs, which can greatly reduce the voltage overshoot, and improve the overall efficiency.