The most common form of rectifier device is the silicon diode. At low levels say up to 50V and currents up to a few amperes, the standard methods make use of silicon junction diodes,usually in bridge form.
Higher current supplies demand diodes mounted on heat sinks,along with the use of Schotky diodes which have lower forward voltage drops, and higher current levels catered for by silicon diodes up to considerable current levels. Specialised EHT silicon diodes can be used for voltages as high as 7KV RMS.
The conventional silicon diode uses a rectifying junction between P-type and N-type silicon,but the Schottky diode uses N-type silicon in a junction with metallic aluminium. Unlike the PN junction, a Schottky junction is homopolar,meaning that only one polarity of carrier (electrons) is used.
The predominant rectifier circuit for electronics use is the full-wave bridge type. Typically these range from 50V peak reverse to 1200V, and from under 1A to 60A.In this type of ciucuits, the DC output level average voltage is 0.885 of AC RMS output, and average DC current is also 0.885 of RMS AC current.The typical level of diode drop is around 1.5V because of the current path through two diodes in each phase of conduction.
If you are unable to find a Schottky diode, you may use high current silicon, such as IN5407 or IN5408 in a bi-phase half wave or full-wave bridge circuit.