Compared to IGBTs, MOSFETs switch faster, have lower losses at lower current levels, and don't suffer from latch-up. However, they cannot withstand the high voltages that IGBTs can and at extremely high current levels, the voltage drop across the MOSFET source-drain resistance can be higher than the gate-emitter diode voltage drop of the IGBT resulting in more losses at these extremely high current levels. But these current levels are so damn high in the first place that it's mostly theoretical. IGBTs can also suffer from thermal run away while MOSFET source-drain resistance increases with temperature reducing snowballing temperature-current increases. For the same reason, it is easier to parallel MOSFETs than IGBTs because the current is more apt to balancing itself out between devices (connecting like connecting resistors in parallel rather than connecting diodes in parallel).
It basically comes down to voltage ratings. MOSFETs can only withstand to about 600V while IGBTs can go up to about 1400V. SInce you are using higher voltages you also need less current for the same amount of power which means if you use an IGBT, you are probably working at very high voltages which means less current and the diode vs resistance loss advantage that the IGBT has over the MOSFET is probably something you will never encounter where the IGBT has less losses than the MOSFET.
20kHz is a little beyond the upper limit switching speed of an IGBT, and well under the max switching speed for a MOSFET. 200V is also well within the range of a MOSFET and 10A is so low current you'll get less losses across the MOSFET resistance than the IGBT diode.