Dear Friends,
Along with greeting, I am designing and manufacturing a small PWM actuator based on an MCT2E optocoupler and IRF640 MOSFET. Initially the design was like this (generic image):
The load is a 100 VDC motor and R2 originally was 330 ohm. The system controlled the speed consuming only 500mA max, but the MOSFET was heated intensely, burning in a minute. After several research (https://www.electro-tech-online.com/threads/driving-a-mosfet-irf640-correctly.109914/) I discovered that the MOS (irf640) was being "saturated" by a very low current in its Gate, which caused that on each rise or fall, the system operated in a linear zone, heating up to die due to the circulation of those 0.5A in the load (the MOS allows more than 10A).
The solution that I found after reading a bit, is to use a pre-amplifier stage (Totem pole), because the MOSFET to reach a fast saturation, requires aprox. 400mA in its Gate. In this way I have tried to mount a couple of improved versions, taking this design as a reference (https://electronicsforu.com/electronics-projects/solid-state-relay)
The problem is now R2. Using 10K on pin 5 of the opto does not switch to 12V (I dont know why), so the base of T1 is never saturated. Now if I decrease R2 to 1K for example, effectively the switching of T1 does occurs. If transistor is short the voltage in R4 is 12v, but when it saturates, the voltage in R4 is not zero, it is rather 4V. That means that after going through the Totem Pole, the signal in the MOS Gate is mounted on a constant of 4 or 5 V. Obviously that causes the MOS not to commute accordingly.
Someone here will have some experience with this type of configuration?
Any type of contribution is appreciated.
Best regards and thank you very much.
OZ
Along with greeting, I am designing and manufacturing a small PWM actuator based on an MCT2E optocoupler and IRF640 MOSFET. Initially the design was like this (generic image):
The load is a 100 VDC motor and R2 originally was 330 ohm. The system controlled the speed consuming only 500mA max, but the MOSFET was heated intensely, burning in a minute. After several research (https://www.electro-tech-online.com/threads/driving-a-mosfet-irf640-correctly.109914/) I discovered that the MOS (irf640) was being "saturated" by a very low current in its Gate, which caused that on each rise or fall, the system operated in a linear zone, heating up to die due to the circulation of those 0.5A in the load (the MOS allows more than 10A).
The solution that I found after reading a bit, is to use a pre-amplifier stage (Totem pole), because the MOSFET to reach a fast saturation, requires aprox. 400mA in its Gate. In this way I have tried to mount a couple of improved versions, taking this design as a reference (https://electronicsforu.com/electronics-projects/solid-state-relay)
The problem is now R2. Using 10K on pin 5 of the opto does not switch to 12V (I dont know why), so the base of T1 is never saturated. Now if I decrease R2 to 1K for example, effectively the switching of T1 does occurs. If transistor is short the voltage in R4 is 12v, but when it saturates, the voltage in R4 is not zero, it is rather 4V. That means that after going through the Totem Pole, the signal in the MOS Gate is mounted on a constant of 4 or 5 V. Obviously that causes the MOS not to commute accordingly.
Someone here will have some experience with this type of configuration?
Any type of contribution is appreciated.
Best regards and thank you very much.
OZ