I disagree with the others.
Assumptions
If a good small signal transistor has a current gain of 240 , hFE, then this ratio is acceptable, but R is not meant to be 1 Ohm here but a fixed value much greater than the rBE which is Ibe dependent, referring to the base emitter resistance.
A Reasonable load R may be 100 Ohms which may be scaled down or up depending on transistor rating.
The reason this Emitter Follower works better is than a collector load, is due to the high Vc voltage which makes the transistor lossy with large VI drop but also makes it Linear for high current gain.
using the collector for inverting output switched loads saturates the Vce and also makes it nonlinear and gain drops to 10% of max linear hFE gain or typically Vce(sat) is rated at Ic/Ib= 10 vs ... 240 in this good example. And as high as Ic/Ib=50 in super low Vsat transistors by Diodes Inc.
This configuration only gives a 5-0.7V output swing with lower input current, but higher losses on 24V supply. These are the tradeoffs.