*========================================================== * UC3842B * ON Semiconductor * PWM Controller * * This model was developed for ON Semiconductor by: * AEI Systems, LLC * 5777 W. Century Blvd. Suite 876 * Los Angeles, California 90045 * Copyright 2002, all rights reserved. * * This model is subject to change without notice. * Users may not directly or indirectly re-sell or * re-distribute this model. This model may not * be used, modified, or altered * without the consent of ON Semiconductor. * * For more information regarding modeling services, * model libraries and simulation products, please * call AEi Systems at (310) 863-8034, or contact * AEi by email: info@aeng.com. http://www.AENG.com * * Revision: 1.0 *========================================================== * * PSpice translation by Christophe Basso, christophe.basso@onsemi.com * .SUBCKT UC3842B 3 14 15 1 18 4 20 2 * E/A FDBK IS RT/CT GND OUT VC VREF ****OSCILLATOR***** XTOF1 8 18 1 18 SWhyste params: RON=.01 ROFF=1MEG VT=2.05 VH=.8 GBDISCH 1 18 Value = { IF ( V(8,18) < 2.5 & V(13,18) > 2.5, 8.3M, 0 ) } RPULL 8 2 100K ****UVLO*********** XTOF2 20 19 20 18 SWhyste params: RON=.01 ROFF=1MEG VT=13 VH=3 RUVLO 19 18 1MEG RSTDBY 20 18 32K ROP 10 18 500 ****REFERENCE******* EBREF 13 18 Value = { IF ( V(19,18) > 6, 5, 0 ) } RREG 10 2 .33 CREF 2 18 1n V3 13 10 GB6 19 18 Value = { I(V3) } ****CURRENT COMPARATOR******* EB3 21 18 Value = { IF ( V(15,18) > V(16,18), 5, 0 ) } R7 15 18 1MEG RDELAY 21 22 1K CDELAY 22 18 150P ****ERROR AMPLIFIER********** XAMP 2 14 3 18 1845AMP ****OFFSET LIMITER*********** R4 12 11 2MEG R6 11 18 1MEG EB2 16 18 Value = { IF ( V(11,18) > 1, 1, V(11,18) ) } V4 3 9 1 D1 9 12 D2 .MODEL D2 D ****OUTPUT DRIVER************ XDRIVE 19 18 5 4 1845OUT ****S-R LATCH**************** XLATCH 8 2 22 18 6 7 FFLOP ****OUTPUT AND GATE********** EB8 5 18 Value = { IF ( V(2,18) > 2.5 & V(7,18) > 2.5 & V(8,18) > 2.5, 10, 0 ) } .ENDS ******** *========================================================== * UC3843B * ON Semiconductor * PWM Controller * * This model was developed for ON Semiconductor by: * AEI Systems, LLC * 5777 W. Century Blvd. Suite 876 * Los Angeles, California 90045 * Copyright 2002, all rights reserved. * * This model is subject to change without notice. * Users may not directly or indirectly re-sell or * re-distribute this model. This model may not * be used, modified, or altered * without the consent of ON Semiconductor. * * For more information regarding modeling services, * model libraries and simulation products, please * call AEi Systems at (310) 863-8034, or contact * AEi by email: info@aeng.com. http://www.AENG.com * * Revision: 1.0 *========================================================== * * PSpice translation by Christophe Basso, christophe.basso@onsemi.com * .SUBCKT UC3843B 3 14 15 1 18 4 20 2 * E/A FDBK IS RT/CT GND OUT VC VREF ****OSCILLATOR***** XTOF1 8 18 1 18 SWhyste params: RON=.01 ROFF=1MEG VT=2.05 VH=.8 GBDISCH 1 18 Value = { IF ( V(8,18) < 2.5 & V(13,18) > 2.5, 8.3M, 0 ) } RPULL 8 2 100K ****UVLO*********** XTOF2 20 19 20 18 SWhyste params: RON=.01 ROFF=1MEG VT=8 VH=.4 RUVLO 19 18 1MEG RSTDBY 20 18 16.8K ROP 10 18 500 ****REFERENCE******* EBREF 13 18 Value = { IF ( V(19,18) > 6, 5, 0 ) } RREG 10 2 .33 CREF 2 18 1n V3 13 10 GB6 19 18 Value = { I(V3) } ****CURRENT COMPARATOR******* EB3 21 18 Value = { IF ( V(15,18) > V(16,18), 5, 0 ) } R7 15 18 1MEG RDELAY 21 22 1K CDELAY 22 18 150P ****ERROR AMPLIFIER********** XAMP 2 14 3 18 1845AMP ****OFFSET LIMITER*********** R4 12 11 2MEG R6 11 18 1MEG EB2 16 18 Value = { IF ( V(11,18) > 1, 1, V(11,18) ) } V4 3 9 1 D1 9 12 D2 .MODEL D2 D ****OUTPUT DRIVER************ XDRIVE 19 18 5 4 1845OUT ****S-R LATCH**************** XLATCH 8 2 22 18 6 7 FFLOP ****OUTPUT AND GATE********** EB8 5 18 Value = { IF ( V(2,18) > 2.5 & V(7,18) > 2.5 & V(8,18) > 2.5, 10, 0 ) } .ENDS ******** *========================================================== * UC3844B * ON Semiconductor * PWM Controller * * This model was developed for ON Semiconductor by: * AEI Systems, LLC * 5777 W. Century Blvd. Suite 876 * Los Angeles, California 90045 * Copyright 2002, all rights reserved. * * This model is subject to change without notice. * Users may not directly or indirectly re-sell or * re-distribute this model. This model may not * be used, modified, or altered * without the consent of ON Semiconductor. * * For more information regarding modeling services, * model libraries and simulation products, please * call AEi Systems at (310) 863-8034, or contact * AEi by email: info@aeng.com. http://www.AENG.com * * Revision: 1.0 *========================================================== * * PSpice translation by Christophe Basso, christophe.basso@onsemi.com * .SUBCKT UC3844B 3 14 15 1 18 4 20 2 * E/A FDBK IS RT/CT GND OUT VC VREF ****OSCILLATOR***** XTOF1 8 18 1 18 SWhyste params: RON=.01 ROFF=1MEG VT=2.05 VH=.8 GBDISCH 1 18 Value = { IF ( V(8,18) < 2.5 & V(13,18) > 2.5, 8.3M, 0 ) } RPULL 8 2 100K ****UVLO*********** XTOF2 20 19 20 18 SWhyste params: RON=.01 ROFF=1MEG VT=13 VH=3 RUVLO 19 18 1MEG RSTDBY 20 18 32K ROP 10 18 500 ****REFERENCE******* EBREF 13 18 Value = { IF ( V(19,18) > 6, 5, 0 ) } RREG 10 2 .33 CREF 2 18 1N V3 13 10 GB6 19 18 Value = { I(V3) } ****CURRENT COMPARATOR******* EB3 21 18 Value = { IF ( V(15,18) > V(16,18), 5, 0 ) } R7 15 18 1MEG RDELAY 21 22 1K CDELAY 22 18 150P ****ERROR AMPLIFIER********** XAMP 2 14 3 18 1845AMP ****OFFSET LIMITER*********** R4 12 11 2MEG R6 11 18 1MEG EB2 16 18 Value = { IF ( V(11,18) > 1, 1, V(11,18) ) } V4 3 9 1 D1 9 12 D2 .MODEL D2 D ****OUTPUT DRIVER************ XDRIVE 19 18 5 4 1845OUT ****S-R LATCH**************** XLATCH 8 2 22 18 6 7 FFLOP ****50% LIMIT TOGGLE********* X9 8 150 18 18 50 51 FFLOP EBTRY 150 18 Value = { IF ( v(2,18) > 2.5 & v(50,18) > 2.5, 5, 0 ) } ****OUTPUT AND GATE********** EB8 5 18 Value = { IF ( V(2,18) > 2.5 & V(7,18) > 2.5 & V(8,18) > 2.5 & + V(50,18) > 2.5, 10, 0 ) } .ENDS ******** *========================================================== * UC3845B * ON Semiconductor * PWM Controller * * This model was developed for ON Semiconductor by: * AEI Systems, LLC * 5777 W. Century Blvd. Suite 876 * Los Angeles, California 90045 * Copyright 2002, all rights reserved. * * This model is subject to change without notice. * Users may not directly or indirectly re-sell or * re-distribute this model. This model may not * be used, modified, or altered * without the consent of ON Semiconductor. * * For more information regarding modeling services, * model libraries and simulation products, please * call AEi Systems at (310) 863-8034, or contact * AEi by email: info@aeng.com. http://www.AENG.com * * Revision: 1.0 *========================================================== * * PSpice translation by Christophe Basso, christophe.basso@onsemi.com * .SUBCKT UC3845B 3 14 15 1 18 4 20 2 * E/A FDBK IS RT/CT GND OUT VC VREF ****OSCILLATOR***** XTOF1 8 18 1 18 SWhyste params: RON=.01 ROFF=1MEG VT=2.05 VH=.8 GBDISCH 1 18 Value = { IF ( V(8,18) < 2.5 & V(13,18) > 2.5, 8.3M, 0 ) } RPULL 8 2 100K ****UVLO*********** XTOF2 20 19 20 18 SWhyste params: RON=.01 ROFF=1MEG VT=8 VH=.4 RUVLO 19 18 1MEG RSTDBY 20 18 16.8K ROP 10 18 500 ****REFERENCE******* EBREF 13 18 Value = { IF ( V(19,18) > 6, 5, 0 ) } RREG 10 2 .33 CREF 2 18 1N V3 13 10 GB6 19 18 Value = { I(V3) } ****CURRENT COMPARATOR******* EB3 21 18 Value = { IF ( V(15,18) > V(16,18), 5, 0 ) } R7 15 18 1MEG RDELAY 21 22 1K CDELAY 22 18 150P ****ERROR AMPLIFIER********** XAMP 2 14 3 18 1845AMP ****OFFSET LIMITER*********** R4 12 11 2MEG R6 11 18 1MEG EB2 16 18 Value = { IF ( V(11,18) > 1, 1, V(11,18) ) } V4 3 9 1 D1 9 12 D2 .MODEL D2 D ****OUTPUT DRIVER************ XDRIVE 19 18 5 4 1845OUT ****S-R LATCH**************** XLATCH 8 2 22 18 6 7 FFLOP ****50% LIMIT TOGGLE********* X9 8 150 18 18 50 51 FFLOP EBTRY 150 18 Value = { IF ( v(2,18) > 2.5 & v(50,18) > 2.5, 5, 0 ) } ****OUTPUT AND GATE********** EB8 5 18 Value = { IF ( V(2,18) > 2.5 & V(7,18) > 2.5 & V(8,18) > 2.5 & + V(50,18) > 2.5, 10, 0 ) } .ENDS ********* .SUBCKT 1845AMP 4 1 9 20 * VREF INV OUT V- .MODEL QPMOD PNP .MODEL DCLAMP D (RS=10 BV=5 IBV=.01) .MODEL DMOD D R1 10 4 100K R2 10 20 100K R3 6 20 316MEG C1 6 20 15.9P E1 5 20 6 20 1 R4 1 20 8MEG I2 4 9 .8M D12 9 4 DMOD R6 20 3 300 D11 9 12 DMOD Q1 20 13 12 QPMOD I3 13 20 68U D14 3 13 DMOD D15 20 6 DCLAMP L1 2 3 10U C2 3 20 200P R9 5 2 5 C5 2 20 .02U G1 20 6 10 1 100U .ENDS ********* .SUBCKT 1845OUT 4 7 3 12 * +V -V IN OUT .MODEL QMOD NPN RC=1.5 RE=.5 RB=100 IKF=0.5 CJC=0.4P .MODEL QMOD2 NPN TF=400P TR=400P .MODEL QIN NPN BF=100 BR=2 IS=1E-16 VAF=50 + CJE=1.5P CJC=.15P TR=1N TF=4N .MODEL DMOD D RS=1 IS=0.4U I3 4 8 100U D3 8 4 DMOD D4 12 8 DMOD Q3 8 1 9 QIN Q4 12 9 7 QMOD Q5 4 8 6 QMOD I4 7 1 .9M R1 3 2 10K Q8 1 2 7 QIN Q2 4 6 12 QMOD2 .ENDS ****************** .SUBCKT FFLOP 1 2 11 12 5 6 * CLK D R S QB Q X1 7 4 2 8 NAND3_0 X2 8 3 10 9 NAND3_0 X3 1 8 10 7 NAND3_1 X4 4 9 1 10 NAND3_0 X5 4 7 6 5 NAND3_1 X6 5 10 3 6 NAND3_0 X7 11 4 INV X8 12 3 INV .ENDS FFLOP * .SUBCKT NAND3_0 1 2 3 4 E1 5 0 VALUE = { IF ( (V(1)>800mV) & (V(2)>800mV) & (V(3)>800mV), 0, 5 ) } R1 5 4 400 C1 4 0 20P IC=0 .ENDS NAND3_0 * .SUBCKT NAND3_1 1 2 3 4 E1 5 0 VALUE = { IF ( (V(1)>800mV) & (V(2)>800mV) & (V(3)>800mV), 0, 5 ) } R1 5 4 400 C1 4 0 20P IC=5 .ENDS NAND3_1 * .SUBCKT INV 1 2 E1 3 0 VALUE = { IF ( V(1)>800mV, 0, 5 ) } R1 3 2 100 C1 2 0 10P IC=5 .ENDS INV * .SUBCKT SWhyste NodeMinus NodePlus Plus Minus PARAMS: RON=1 ROFF=1MEG VT=5 VH=2 S5 NodePlus NodeMinus 8 0 smoothSW EBcrtl 8 0 Value = { IF ( V(plus)-V(minus) > V(ref), 1, 0 ) } EBref ref1 0 Value = { IF ( V(8) > 0.5, {VT-VH}, {VT+VH} ) } Rdel ref1 ref 100 Cdel ref 0 100p IC={VT+VH} Rconv1 8 0 10Meg Rconv2 plus 0 10Meg Rconv3 minus 0 10Meg .model smoothSW VSWITCH (RON={RON} ROFF={ROFF} VON=1 VOFF=0) .ends SWhyste * ****** Application models ***** .SUBCKT MOC8101 1 2 3 5 * ISOLATOR A C COL EMITTER RB 4 0 100Meg VM 1 6 D1 6 2 LED H1 7 0 VM .0055 R1 7 8 1K C1 8 0 3.35nF G1 3 4 8 0 1 Q1 3 4 5 MPSA06 .MODEL LED D(N=1.7 RS=.7 CJO=23.9P IS=85.3p BV=6 IBV=10U + VJ=0.75 M=0.333 TT=4.32U) .MODEL MPSA06 NPN (IS=15.2F NF=1 BF=589 VAF=98.6 IKF=90M ISE=3.34P NE=2 + BR=4 NR=1 VAR=16 IKR=0.135 RE=0.343 RB=1.37 RC=0.137 XTB=1.5 + CJE=9.67P VJE=1.1 MJE=0.5 CJC=7.34P VJC=0.3 MJC=0.3 TF=10.29n TR=276N) .ENDS MOC8101 *$ **** MULTI-WINDING TRANSFORMER **** .SUBCKT XFMR2 1 2 3 4 10 11 PARAMS: RATIO1=1 RATIO2=1 RP 1 2 1MEG E1 5 4 VALUE = { V(1,2)*RATIO1 } G1 1 2 VALUE = { I(VM1)*RATIO1 } RS1 6 3 1U VM1 5 6 E2 20 11 VALUE = { V(2,1)*RATIO2 } G2 2 1 VALUE = { I(VM2)*RATIO2 } RS2 21 10 1U VM2 20 21 .ENDS XFMR2 *$ **** SINGLE WINDING TRANSFORMER **** .SUBCKT XFMR1 1 2 3 4 PARAMS: RATIO=1 RP 1 2 1MEG E 5 4 VALUE = { V(1,2)*RATIO } G 1 2 VALUE = { I(VM)*RATIO } RS 6 3 1U VM 5 6 .ENDS XFMR1 *$ ********* .model mbr140p d + is= 4.41547e-06 + rs= 0.103922 + n= 1.03751 + tt= 1e-12 + cjo= 1.598e-10 + vj= 0.4934 + m= 0.4258 + eg= 0.6 + xti= 3.29768 + fc= 0.5 + bv= 48 + ibv= 0.01 + kf= 0 + af= 1 ******* *$ .MODEL 1n962A d +RS=5.2600 BV=10.940 +CJO=710.46P TT=20N N=2 +IS=1E-9 IBV=11.364M ****** *$ .MODEL dn752a d +RS=6.1685 BV=5.4766 +M=.33 VJ=.75 IS=1E-11 +CJO=376.59P TT=50N +N=1.27 IBV=10MA ****** *$ .SUBCKT TL431 7 6 11 V1 1 6 2.495 R1 6 2 15.6 C1 2 6 .5U R2 2 3 100 C2 3 4 .08U R3 4 6 10 G2 6 8 3 6 1.73 D1 5 8 DC D2 7 8 DC V4 5 6 2 G1 6 2 1 11 0.11 .MODEL DC D +IS=13.5N RS=25M N=1.59 + CJO=45P VJ=.75 M=.302 + TT=50.4N BV=34V IBV=1MA .ENDS *$ ******** .subckt mtd1n60e 10 20 30 * * 10 = Drain 20 = Gate 30 = Source * ****************************************************************************** * *------------------------ EXTERNAL PARASITICS -------------------------------- * PACKAGE INDUCTANCE * LDRAIN 10 11 4.5e-09 LGATE 20 21 7.5e-09 LSOURCE 30 31 7.5e-09 * * RESISTANCES * RDRAIN1 4 11 RDRAIN 6.853 RDRAIN2 4 5 RDRAIN 0.088 RSOURCE 31 6 RSOURCE 0.1 RDBODY 8 30 RDBODY 0.061 * RGATE 21 2 5 * *-------------------------------------------------------------------------- * *--------------- CAPACITANCES AND BODY DIODE ------------------------------ * DBODY 8 11 DBODY DGD 3 11 DGD CGDMAX 2 3 3e-10 RGDMAX 2 3 1e+08 CGS 2 6 2.2e-10 * *-------------------------------------------------------------------------- * *----------------------- CORE MOSFET -------------------------------------- * M1 5 2 6 6 MAIN * *-------------------------------------------------------------------------- * .MODEL RDRAIN RES ( +TC1 = 0.008186 +TC2 = 1.74896e-05) * .MODEL RSOURCE RES ( +TC1 = -0.001057 +TC2 = 6.14713e-05) * .MODEL RDBODY RES ( +TC1 = 0.002026 +TC2 = 1.49534e-05) * * .MODEL MAIN NMOS ( +LEVEL = 3 +VTO = 3.89 +KP = 1.75 +GAMMA = 3 +PHI = 0.6 +LAMBDA = 0.0001 +RD = 0 +RS = 0 +CBD = 0 +CBS = 0 +IS = 1e-14 +PB = 0.8 +CGSO = 0 +CGDO = 0 +CGBO = 0 +RSH = 0 +CJ = 0 +MJ = 0.5 +CJSW = 0 +MJSW = 0.33 +JS = 1e-14 +TOX = 1e-07 +NSUB = 1e+15 +NSS = 0 +NFS = 1.1e+12 +TPG = 1 +XJ = 0 +LD = 0 +UO = 600 +UCRIT = 1000 +UEXP = 0 +UTRA = 0 +VMAX = 0 +NEFF = 1 +KF = 0 +AF = 1 +FC = 0.5 +DELTA = 0 +THETA = 0 +ETA = 0 +KAPPA = 0.2) * *-------------------------------------------------------------------------- * .MODEL DGD D ( +IS = 1e-15 +RS = 0 +N = 1000 +TT = 0 +CJO = 1.403e-10 +VJ = 0.1366 +M = 0.6185 +EG = 1.11 +XTI = 3 +KF = 0 +AF = 1 +FC = 0.5 +BV = 10000 +IBV = 0.001) * *-------------------------------------------------------------------------- * .MODEL DBODY D ( +IS = 1.891e-11 +RS = 0 +N = 1.196 +TT = 5e-07 +CJO = 1.364e-10 +VJ = 0.9158 +M = 0.6082 +EG = 1.11 +XTI = 4.5 +KF = 0 +AF = 1 +FC = 0.5 +BV = 658.9 +IBV = 0.00025) .ENDS *$ ******