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Why materials used for preparing computers memories should have high elec resistance

Discussion in 'Mathematics and Physics' started by sandy92, May 26, 2010.

  1. sandy92

    sandy92 New Member

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    Metallic glasses are used to make computer memories and magneto resistance sensors because of their
    high electrical resistance.why low electrical resistance materials can't be used in the preparation of computer
    memories or storage elements?
     
    Last edited: May 26, 2010
  2. nsaspook

    nsaspook Well-Known Member

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    The basic answer is:

    The bits in a typical non-volatile memory device are stored as an electron charge in small capacitors in the device. The insulators (silicon oxide) surround the "plates" (floating gate in a EEPROM) in the capacitor. In other devices the charge is stored deep in a "well" that maintains the small voltage even when the power is off.

    In a DRAM device the same thing is used but with a different structure for faster access.

    Flash memory cell. http://www.lascon.co.uk/flashstor1.gif
    http://upload.wikimedia.org/wikiped...ucture.svg/220px-Flash_cell_structure.svg.png

    Storage Well. http://www.freepatentsonline.com/6556477-0-large.jpg

    DRAM device. Semiconductor Memory Device Formed Of A SOI-type Transistor And A Capacitor - Patent 4791610

    Want to know more? Physics of semiconductor devices [Book]
     
  3. Sceadwian

    Sceadwian Banned

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    Both insulators and conductors are required for a modern memory devices, so both are actually used in the preparation of modern memory, why do you think otherwise?
     

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