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Higher-frequency designs benefit from thinner laminations but also need less core mass to handle the same amount of power. It is the weight savings possible with 400-Hz power that drives use on aircraft.
Hi,Hi
In reply to Q2, KISS said that as the frequency gets larger, everything gets smaller such as transformers etc. Could you please tell how the size of a transformer is dependent on the frequency used? I'm sorry if I'm missing something obvious. Thanks.
In reply to Q1, MrAl said, "Yes, or a comparator and op amp to achieve PWM". Could you please show me how this circuit will be implemented?
I understand that in n-type material, electrons are majority carriers and the holes are minority carriers. Likewise, in p-type material, the holes are majority carriers and electrons are minority carriers. But how are the majority carrier and minority carrier devices differentiated? For instance, in a majority carrier device, majority carriers could either be electrons or holes.
It says here that a power semiconductor device is usually used in "commutation mode" (i.e., it is either on or off), and therefore has a design optimized for such usage; it should usually not be used in linear operation. What does it mean by "linear operation"? Perhaps, the linear operation refers to the condition where a semiconductor device keeps functioning in same state for prolonged period of time. Please help me. Thanks.
Thank you for the help.
Regards
PG
I understand that in n-type material, electrons are majority carriers and the holes are minority carriers. Likewise, in p-type material, the holes are majority carriers and electrons are minority carriers. But how are the majority carrier and minority carrier devices differentiated? For instance, in a majority carrier device, majority carriers could either be electrons or holes.
Luckily, the flux density also goes down with frequency:
B=Kn/(F*A*Kd) (Kn and Kd may be different here)
so the higher the frequency the lower the flux density.