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Old 2nd March 2005, 02:39 PM   (permalink)
Default MOSFET

1. Could someone help me to determine the gate oxide capacitance for a MOSFET?
2. I know the oxide thickness, what more do I need to find it out?
3. What is the equation? C= eps*area/thickness ?
Cue is offline  
Old 2nd March 2005, 04:02 PM   (permalink)
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No datasheet? Or is this part of an experiment?
ElectricWraith is offline  
Old 5th March 2005, 12:23 PM   (permalink)
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You need to know the thickness, area and the dielectric constant of the oxide.
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dalt is offline  
Old 7th March 2005, 04:51 PM   (permalink)
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1. yes it's an experiment.

2. I have the thickness: 9nm
and the area: 0.24 x 10 nm^2
and the oxide is silicon oxide with dielectric constant 3.9

So is this equation applicable also in micro scale devices?
C= ( eps* area ) / thickness
Cue is offline  
Old 7th March 2005, 09:10 PM   (permalink)
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Of course the equation is valid at any scale, but your problem is a little more complicated because the capacitance of a MOS structure is dependent by the conductivity of semiconductor region under oxid, so is dependent by voltage applied to MOS, because this voltage will modulate the conductivity of semiconductor right away under oxide.
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