What is the P-channel equivalent of the N-channel IRF510 available at Radio Shack. I've discovered the IRF9530, but its rated at 16 amps when I only need 1.5, and I have no idea where to purchase this part.

 

I doubt you'll find an equivalent P-ch FET at a radio shack. Frankly, I'm suprised that they even still sell IRF510's.

How many do you need? If it is say under 20 or so, why not find what you need from fairchild semiconductor and have them send you samples? They are free. If you have to buy them, mouser carries most of fairchild.

 

Thanks for the sample suggestion. I'll try it out, assuming I know which part number to ask for. Why are you surprised that Radio Shack carries a MOSFET?

 

Probably because they stock hardly ANY components these days?, at least according to posts in these forums. They actually pulled out of the UK years ago - where they were called Tandy.

__________________
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BTW, the "available at RadioShack" refers to the IRF510. I don't care where the P-channel equivalent comes from, I'm just looking for the part #.

 

Tandy? yes that's right.

Here in Canada, Radio Shack, they also pulled out, just before christmas, and switched their name to The Circuit or something like that.

They still, hardly carry anything for electronic hobbiest. Just basic discreet components. Some LEDs ect...

As far as I'm concerned, they should just give up and close.

Everyone I know, when needing gates and semi conductors chips ect..., all order from the mega houses like Digikey ect...

 

Anyways dinofx, sorry for not being so straight forward in your search, but I just did the hard work for you.

Here it is.

FRL9130D 5A/ -100V/ 0.550 Ohm/ Rad Hard/ P-Channel Power MOSFETs by Intersil
FRL9130H 5A/ -100V/ 0.550 Ohm/ Rad Hard/ P-Channel Power MOSFETs by Intersil
FRL9130R 5A/ -100V/ 0.550 Ohm/ Rad Hard/ P-Channel Power MOSFETs by Intersil

They have almost the same electrical characteristics, as a irf510
Check them out, I doubt that they will fit your purpose exactly,.

 

Oh I forgot, Here is irf510 specs quickly 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET.

Notice voltage polarity is reversed ???

Just making sure you understand what your doing.

Have fun.

 

Why not simply look on the manufacturers website?, a couple of minutes soon shows that the P versions of their hexfet's simply have a leading '9' added, so the P version is IRF9510.

__________________
PIC programmer software, and PIC Tutorials at:
http://www.winpicprog.co.uk

 

We can't all be smart like you Nigel. :cry:
That is why you are GOD. :shock:
In your case, it never was how many post you made that made you this good, It was always because you were a GOD. :shock:
Now all bow. to our GOD.

 

If I thought you were being sarcastic?, I'd send a plague of locusts to visit :lol:

__________________
PIC programmer software, and PIC Tutorials at:
http://www.winpicprog.co.uk

 

Ha Ha Ha.


Just having fun.

Have a good day!

 

Thanks, I was searching using "IRFP" But I guess the "P" refers to "power" and not "p-channel".

For those interested:

.subckt IRF9510 D G S
.model mosfet PMOS( LEVEL=7 VTO=-3.326 RS=0.31236 KP=2.296 RD=0.5824 TC1RD=0.0145 RG=50.893 IS=1e-36
+ CGDMAX=2.50E-10 CGDMIN=4.00E-12 XG2CGD=0.2 XG1CGD=0.1 CBD=8.41E-11 VTCGD=1.5)
.model diode D( IS=2.86e-30 RS=0.1801 TT=1.427e-07)
M1 D G S S mosfet
D1 D S Diode
Cgs G S 1.84E-10
.ends
.subckt IRF9520S D G S
.model mosfet PMOS( LEVEL=7 VTO=-3.298 RS=0.16468 KP=5.891 RD=0.29 TC1RD=0.0135 RG=24.569 IS=1e-36
+ CGDMAX=7.20E-10 CGDMIN=6.00E-12 XG2CGD=0.25 XG1CGD=0.1 CBD=1.18E-10 VTCGD=2)
.model diode D( IS=4.25e-26 RS=0.1259 TT=7.723e-06)
M1 D G S S mosfet
D1 D S Diode
Cgs G S 3.40E-10
.ends
.subckt IRF9530S D G S
.model mosfet PMOS( LEVEL=7 VTO=-3.214 RS=0.09611 KP=7.673 RD=0.1247 TC1RD=0.0157 RG=17.932 IS=1e-36
+ CGDMAX=1.40E-09 CGDMIN=4.00E-11 XG2CGD=0.25 XG1CGD=0.1 CBD=2.20E-10 VTCGD=1)
.model diode D( IS=1.27e-25 RS=0.069 TT=1.506e-07)
M1 D G S S mosfet
D1 D S Diode
Cgs G S 7.55E-10
.ends
.subckt IRF9540 D G S
.model mosfet PMOS( LEVEL=7 VTO=-3.192 RS=0.05098 KP=13.966 RD=0.0985 TC1RD=0.0124 RG=21.486 IS=1e-36
+ CGDMAX=2.00E-09 CGDMIN=2.00E-11 XG2CGD=0.2 XG1CGD=0.1 CBD=5.13E-10 VTCGD=1)
.model diode D( IS=2.39e-27 RS=0.0447 TT=1.465e-07)
M1 D G S S mosfet
D1 D S Diode
Cgs G S 1.27E-09
.ends
.subckt IRF9610 D G S
.model mosfet PMOS( LEVEL=7 VTO=-3.667 RS=0.47274 KP=0.813 RD=1.733 TC1RD=0.011 RG=10 IS=1e-36
+ CGDMAX=4.05E-10 CGDMIN=3.00E-12 XG2CGD=0.25 XG1CGD=0.1 CBD=3.06E-11 VTCGD=0)
.model diode D( IS=6.17e-61 RS=0.267 TT=1.762e-06)
M1 D G S S mosfet
D1 D S Diode
Cgs G S 1.53E-10
.ends

 

So what did you finally settle for? Please,...... the suspense is killing me.... knowing, that there is potential for critisism here.

 

I was going to use the MOSFET in favor of a power transistor because A) it takes very little current to drive it, and B), the voltage drop can be almost zero. But, after simulating it I don't see a big advantage over an NPN power transistor, mostly because my load is low resistance and the voltage drop is still going to be about the same.

My goal is to power the load between ~7 and 11 volts, approaching 12 volts is extra credit.

I am operating the MOSFET in "linear" mode by using its own output as feedback to the gate. Are they designed to operate in this range? Or should they just be "wide open".

Attached Images

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