I'm not very sure what you are asking?, the supply voltage isn't particularly dependent on the transistor you use, but on other factors - mainly the voltage swing you need. The main concern for the transistor is that it can handle the voltage you provide it.

The Second main concern is adjusting the Base Bias Correctly.

In a typical class A amplifier, with no signal present, the collector voltage should be 1/2 Supply, Plus .6 volts.

So for a 12 volt supply, the collector voltage would be 6.6 volts.
This should give the Best Symetrical Output Signal.

The Supply Voltage should Not Exceed 30 Volts for this transistor.
I Also like and use the 2N5088.

Originally Posted by aurosunil

what basis you said that Supply Voltage for this transistor should not exceed 30 Volts?

It is the very first absolute maximum rating on its datasheet.

Your Supply voltage is determined by the Output Voltage Swing that you need. And I Don't really Recommend 30 Volts.

The Output voltage swing will Typically be about 1 volt less than the supply voltage, but this also depends on your collector resistor.

The Current will partly be a Function of the Collector Resistor and Emitter resistor.

If you are going for Voltage Gain, I would recommend a 2K2 to 10K on the Collector.

An Emitter resistor will help with bias as well as protect the transistor from excessive current. (Possibly a 470 to 1K resistor)
Bypassing this resistor with a Capacitor, will help with Low Frequency Response. (.1uF to 100uF)

This Info is Very General.
If you need more info, I would suggest you do some Research, or a lot of expermenting.

Originally Posted by aurosunil

What i understand is following in general:
1. Supply Voltage Vcc can not be more than maximum value of Vce.
2. Vcc is limited by the output voltage swing.

Usually the voltage swing is selected first, Vcc is matched to it and a transistor is selected with a high enough Vce.

3. Once Vcc is decided Ib should be chosen for Q point

Since a bare transistor produces a lot of distortion and its Q-point isn't stable with temperature changes, negative feedback is used to assist with biasing the transistor, reducing distortion and making it more temperature stable. :lol:

It looks pretty good but its max output swing won't be symmetrical because the emitter voltage is about 2.3V. If the emitter resistor is bypassed for max gain then the collector voltage should be half-way between 2.4V and 15V.

It has a high 75k output resistance so must feed a load of 750k or more to keep its gain from dropping due to loading.

Originally Posted by aurosunil

It is all right but I am still puzzled about what is the criteria for the following:

1. How to select Ve :?: Is there any principle? :?:
2. In almost all the books it is written that dc load line should be drawn to fix the Q-point. But in the datasheets I don't find collector charcterstics so how to draw the dc loadline :?:
:?

I haven't drawn a load line for about 40 years. I used them with very nonlinear germanium transistors. Your text books were probably made before linear silicon transistors and negative feedback were invented. My 1968 Philips Transistors Data Handbook has collector curves.

I select RE so that the emitter voltage is raised at least 1V. Then temperature won't affect the transistor much. I select RE in a ratio with RC//load for low gains.

I calculate a voltage for the Q-point halfway between when the transistor is cutoff and when it is saturated. That's all. :lol:

Originally Posted by aurosunil

Transistors datasheets gives ON Charcterstics i.e. there are listed hfe values for various values of Ice and Vce. It means that dc biasing should be done for the particular value of Ic corresponding to that hfe value upon which we base our design :?
say for example 2N5088 Ic = 100micro amp if we design for hfe = 300 :?:

The 2N5088 could have an hFE anywhere from 300 to 900 at 100uA. Therefore it varies so much that you should never design a transistor circuit for a certain hFE such as 300, or it might not work with transistors with an hFE of 800 or 900.
Just have a current in the voltage divider for its base bias of at least 10 times the transistor's base current at its lowest hFE. Then the voltage divider's voltage isn't changed by the base current and the circuit will work with any 2N5088 transistor. :lol: